CGH40120F Cree, Inc. RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
Description
RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
The product with part number CGH40120F (RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT)
is from company Cree, Inc. and distributed with basic unit price 311,90 EUR. Minimal order quantity is 1 pc.
Cree, Inc. Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 1 GHz to 2.5 GHz Gain: 19 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V Id - Continuous Drain Current: 12 A Output Power: 120 W Maximum Drain Gate Voltage: - Maximum Operating Temperature: + 150 C Pd - Power Dissipation: - Mounting Style: Screw Package/Case: 440193 Packaging: Tube Application: - Brand: Cree, Inc. Ciss - Input Capacitance: 35.3 pF Class: - Configuration: Single Development Kit: CGH40120F-TB Forward Transconductance - Min: - Gate-Source Cut-off Voltage: - Minimum Operating Temperature: - 40 C Noise Figure: - Operating Temperature Range: - P1dB: - Rds On - Drain-Source Resistance: - Vgs th - Gate-Source Threshold Voltage: - 3 V
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