CAS120M12BM2 Cree, Inc. Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module

Part Nnumber
CAS120M12BM2
Description
Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module
Producer
Cree, Inc.
Basic price
338,55 EUR

The product with part number CAS120M12BM2 (Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module) is from company Cree, Inc. and distributed with basic unit price 338,55 EUR. Minimal order quantity is 1 pc, Approx. production time is 8 weeks.


Cree, Inc. Product Category: Discrete Semiconductor Modules RoHS:  Details Product: Power Semiconductor Modules Type: H-Bridge MOSFET Module Mounting Style: Screw Package/Case: Module Packaging: Bulk Brand: Cree, Inc. Configuration: Half-Bridge Forward Voltage Drop: - Gate Trigger Current - Igt: - Holding Current Ih Max: - Id - Continuous Drain Current: 193 A Load Voltage: 800 V Operating Supply Voltage: - Operating Temperature: - Output Current: - Rds On - Drain-Source Resistance: 13 mOhms Reverse Voltage: - Typical Delay Time: - Vds - Drain-Source Breakdown Voltage: 1.2 kV


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(keyword CAS120M12BM2 Cree, Inc. Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module)
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